3-13 3 general purpose amplifiers (lnas, hpas, linear amps) optimum technology matching? applied gaas hbt ingap hbt gaas mesfet sige bicmos si bicmos sige hbt gaas phemt si cmos si bjt gan hemt functional block diagram rf micro devices?, rfmd?, optimum technology matching?, enabling wireless connectivity?, powerstar?, polaris? total radio? and ultimateblue? are trademarks of rfmd, llc. bluetooth is a trade- mark owned by bluetooth sig, inc., u.s.a. and licensed for use by rfmd. all other trade names, trademarks and registered tradem arks are the property of their respective owners. ?2006, rf micro devices, inc. product description 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . ordering information pin 1 indicator rf out ground rf in ground 1 9 6 5 7 8 4 3 2 nbb-502 cascadable broadband gaas mmic amplifier dc to 4ghz the nbb-502 cascadable broadband ingap/gaas mmic amplifier is a low-cost, high-performance solution for general purpose rf and micro- wave amplification needs. this 50 gain block is based on a reliable hbt proprietary mmic design, providing unsurpassed performance for small- signal applications. designed with an external bias resistor, the nbb-502 provides flexibility and stability. the nbb-502 is packaged in a low-cost, surface-mount ceramic package, provid ing ease of assembly for high-vol- ume tape-and-reel requirements. it is available in either 1,000 or 3,000 piece-per-reel quantities. features ? reliable, low-cost hbt design ? 19.0db gain, +13.0dbm p1db@2ghz ? high p1db of +14.0dbm@6.0ghz ? single power supply opera- tion ? 50 i/o matched for high freq. use applications ? narrow and broadband com- mercial and military radio designs ? linear and saturated amplifi- ers ? gain stage or driver amplifi- ers for mwradio/optical designs (ptp/pmp/ lmds/unii/vsat/wlan/cel- lular/dwdm) nbb-502 cascadable broadband gaas mmic amplifier dc to 4ghz nbb-502 cascadable broadband gaas mmic amplifier dc to 4ghz nbb-502-t1 tape & reel, 1000 pieces nbb-502-e fully assembled evaluation board nbb-x-k1 extended frequency ingap amp designer?s tool kit rev a5 ds060124 9 nbb-502cas- cadable broadband gaas mmic amplifier dc to 4ghz rohs compliant & pb-free product package style: mpga, bowtie, 3x3, ceramic
3 general purpose amplifiers (lnas, hpas, linear amps) 3-14 nbb-502 rev a5 ds060124 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . absolute maximum ratings parameter rating unit rf input power +20 dbm power dissipation 300 mw device current 70 ma channel temperature 200 c operating temperature -45 to +85 c storage temperature -65 to +150 c exceeding any one or a combination of these limits may cause permanent damage. parameter specification unit condition min. typ. max. overall v d =+3.9v, i cc =35ma, z 0 =50 , t a =+25c small signal power gain, s21 19.0 20.5 db f=0.1ghz to 1.0ghz 19.0 db f=1.0ghz to 2.0ghz 16.0 17.0 db f=2.0ghz to 4.0ghz gain flatness, g f 0.8 db f=1.0ghz to 3.0ghz input and output vswr 1.55:1 f=0.1ghz to 4.0ghz 1.50:1 f=4.0ghz to 6.0ghz 1.55:1 f=6.0ghz to 10.0ghz bandwidth, bw 4.2 ghz bw3 (3db) output power @ -1db compression, p1db 13.0 dbm f=2.0ghz 14.0 dbm f=6.0ghz noise figure, nf 4.0 db f=3.0ghz third order intercept, ip3 +23.0 dbm f=2.0ghz reverse isolation, s12 -17.0 db f=0.1ghz to 10.0ghz device voltage, v d 3.6 3.9 4.2 v gain temperature coefficient, g t / t -0.0015 db/c mttf versus temperature @ i cc =35ma case temperature 85 c junction temperature 109.4 c mttf >1,000,000 hours thermal resistance jc 179 c/w j t t case ? v d i cc ? -------------------------- - jc cwatt ? () = caution! esd sensitive device. the information in this publication is believed to be accurate and reliable. how- ever, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd rese rves the right to change component cir- cuitry, recommended application circuitry and specifications at any time without prior notice. rohs status based on eudirective2002/95/ec (at time of this document revi- sion).
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